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| 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: * * * 2N6303 High-Speed Switching Medium-Current Switching High-Frequency Amplifiers Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min) DC Current Gain: h FE = 30-150 @ IC = 1.5 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) FEATURES: * * * * Silicon PNP Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200 C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-5 ABSOLUTE MAXIMUM RATINGS: RATINGS: SYMBOL VCEO* VCB* VEB* IC* IC* IB* TSTG* TJ* PD* CHARACTERISTIC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Total Device Dissipation TC = 25 C Derate above 25 C Total Device Dissipation TA = 25 C Derate above 25 C Thermal Resistance Junction to Case Junction to Ambient VALUE UNITS Vdc Vdc Vdc Adc Adc Adc C C Watts mW/ C Watts mW/ C C/W C/W - 80 - 80 - 4.0 10 3.0 0.5 -65 to 200 -65 to 200 6.0 34.3 1.0 5.71 29 175 PD* JC * Indicates JEDEC registered data. MSC1062.PDF 05-25-99 2N6303 ELECTRICAL CHARACTERISTICS: (25 Case Temperature Unless Otherwise Noted) SYMBOL VCEO(sus)* BVCBO* BVEBO* ICEX* ICBO* hFE* CHARACTERISTIC Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain (Note 1) TEST CONDITIONS IC = 20 mAdc, IB = 0 (Note 1) IC = 100 Adc, IE = 0 IE = 100 Adc, IC = 0 VCE = - 80V, VBE(off) = 2.0 Vdc VCB = - 80V, IE = 0, TC = 150 C IC = 500 mAdc, VCE = - 1.0 Vdc IC = 1.5 Adc, VCE = - 2.0 Vdc IC = 2.5 Adc, VCE = - 3.0 Vdc IC = 3.0 Adc, VCE = - 5.0 Vdc IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc IC = 2.5 Adc, IB = 250 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc IC = 2.5 Adc, IB = 250 mAdc IC = 100 mAdc, VCE = - 5.0 Vdc, ftest = 20 MHz VCB = - 10 Vdc, IE = 0, f = 0.1 MHz VEB = - 3.0 Vdc, IC = 0, f = 0.1 MHz VCC = - 30 Vdc, VBE(off) = 0, IC =1.5 Adc, IB1 = 150 mAdc VCC = - 30 Vdc, VBE(off) = 0, IC =1.5 Adc, IB1 = 150 mAdc VCC = - 30 Vdc, IC = 1.5 Adc, IB1 = IB2 =150 mAdc VCC = - 30 Vdc, IC = 1.5 Adc, IB1 = IB2 =150 mAdc VALUE Min. Max. ---- 80 Units Vdc Vdc Vdc Adc Adc - 80 - 4.0 ------35 30 20 20 ------------- ------1.0 150 ---150 ------- ------------Vdc Vdc Vdc Vdc Vdc Vdc MHz pF pF ns ns ns ns VCE(sat)* Collector-Emitter Saturation Voltage (Note 1) Base-Emitter Saturation Voltage (Note 1) Current Gain Bandwidth Product (Note 2) Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time VBE(sat)* - 0.9 ---60 ------------------- - 0.5 - 0.75 - 1.3 - 1.0 - 1.4 - 2.0 ---120 1000 35 65 325 75 fT* Cob* Cib* td* tr* ts* tf* Note 1: Pulse Test: Pulse Width 300s, Duty Cycle 2.0%. Note 2: fT = |hfe| * ftest * Indicates JEDEC registered data. MSC1062.PDF 05-25-99 2N6303 PACKAGE MECHANICAL DATA: 1.500 [38.10] MIN .031 [.787] .240 [6.09] .260 [6.60] .010 [.254] .030 [.762] 45 . 029 [.736] .045 [1.14] .200 [5.08] O.305 [7.75] O.335 [8.51] .100 [2.54] O.017 +.002 [.432] [.025] -.001 [+.051] .100 [2.54] O.335 [8.51] O.370 [9.40] NOTE: DIMENSIONS IN [ ] = MILLIMETERS MSC1062.PDF 05-25-99 This datasheet has been download from: www..com Datasheets for electronics components. |
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